MRF7S24250N
MRF7S24250N is RF Power LDMOS Transistor manufactured by NXP Semiconductors.
NXP Semiconductors Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
The 250 W CW RF power transistor is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing.
Typical Performance: In 2400- 2500 MHz reference circuit, VDD = 32 Vdc
Frequency
Pin Gps D Pout
(MHz)
Signal Type
(W)
(d B)
(%)
(W)
2400 2450 2500
CW 9.0 14.5 55.5 255 9.0 14.7 54.8 263 9.0 14.3 55.5 242
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
CW > 10:1 at all Phase Angles
Pin (W)
14 (3 d B Overdrive)
Test Voltage
Result
32 No Device Degradation
Features
- Characterized with series equivalent large--signal impedance parameters
- Internally matched for ease of use
- Qualified up to a maximum of 32 VDD...
