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PBSS2515YPN - low VCE(sat) NPN/PNP transistor

General Description

NPN/PNP low VCEsat transistor pair in a SC-88 plastic package.

MARKING TYPE NUMBER PBSS2515YPN Note 1.

= -: made in Hong Kong = t: made in Malaysia

= W: made in China.

Key Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Replaces two SC-70 packaged low VCEsat transistors on same PCB area.
  • Reduces required PCB area.
  • Reduced pick and place costs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PBSS2515YPN 15 V low VCE(sat) NPN/PNP transistor Product specification Supersedes data of 2002 May 08 2005 Jan 11 Philips Semiconductors Product specification 15 V low VCE(sat) NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATION • General purpose switching and muting • Low frequency driver circuits • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package.