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PDTA114E Datasheet PDF

NXP Semiconductors PDTA114E

PNP resistor-equipped transistors

Part No. PDTA114E
Datasheet PDTA114E Download
Manufacturer
NXP Semiconductors
Description PNP resistor-equipped transistors
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PDTA114E datasheet page 1 preview

FEATURES

● Built-in bias resistors
● Simplified circuit design
● Reduction of component count
● Reduced pick and place costs.

APPLICATIONS

● General purpose switching and amplification
● Inverter and interface circuits
● Circuit driver.

DESCRIPTION

PDTA114E series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 10 10 MAX. −50 −100 − − UNIT V mA kΩ kΩ PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTA114EE PDTA114EEF PDTA114EK PDTA114EM PDTA114ES PDTA114ET PDTA114EU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 03 03 03 E5 TA114E *03(1) *03(1) PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ES PDTC114ET PDTC114EU MARKING CODE NPN COMPLEMENT 2004 Aug 02 2 NXP Semiconductor...
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