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PDTC113ET - NPN resistor-equipped transistor

General Description

NPN resistor-equipped transistors.

PNP complement: PDTA113ET.

Key Features

  • s Built-in bias resistors s Simplifies circuit design s Reduces component count s Reduces pick and place costs. 1.3.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PDTC113ET NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 02 — 8 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistors. PNP complement: PDTA113ET. 1.2 Features s Built-in bias resistors s Simplifies circuit design s Reduces component count s Reduces pick and place costs. 1.3 Applications s General purpose switching and amplification s Inverter and interface circuits s Circuit driver. 1.4 Quick reference data Table 1: Symbol VCEO IO R1 R2 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor bias resistor Conditions Min Typ 1 1 Max 50 100 Unit V mA kΩ kΩ 2.