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PDTC115E - NPN Transistor

General Description

NPN resistor equipped transistor (see “Simplified outline, symbol and pinning” for package details).

Key Features

  • Built-in bias resistors.
  • Simplified circuit design.
  • Reduction of component count.
  • Reduced pick and place costs.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 Apr 06 2004 Aug 06 NXP Semiconductors NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet PDTC115E series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO collector-emitter voltage IO output current (DC) R1 bias resistor R2 bias resistor TYP. − − 100 100 MAX.