Click to expand full text
PHD/PHU77NQ03T
N-channel TrenchMOS FET
Rev. 01 — 28 November 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Fast switching
I Low thermal resistance
1.3 Applications
I DC-to-DC converters
I Computer motherboard
1.4 Quick reference data
I VDS ≤ 25 V I RDSon ≤ 9.5 mΩ
I ID ≤ 75 A I QGD = 3.2 nC (typ)
2. Pinning information
Table 1. Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to
drain (D)
Simplified outline
[1] mb
2 13
SOT428 (DPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 package.
PHD77NQ03T Datasheet
