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PHD77NQ03T - N-channel TrenchMOS FET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • I Fast switching I Low thermal resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 — 28 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Fast switching I Low thermal resistance 1.3 Applications I DC-to-DC converters I Computer motherboard 1.4 Quick reference data I VDS ≤ 25 V I RDSon ≤ 9.5 mΩ I ID ≤ 75 A I QGD = 3.2 nC (typ) 2. Pinning information Table 1. Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D) Simplified outline [1] mb 2 13 SOT428 (DPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 package.