PHN603S Description
Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in puter disk and tape drives as a three phase brushless d.c.
PHN603S Key Features
- Schottky diode across each MOSFET
- Low on-state resistance
- Fast switching
- Logic level patible
- Surface mount package