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PHN708 - 7 N-channel 80 mohm FET array enhancement mode MOS transistors

Description

Seven enhancement mode MOS transistors in a 24-pin plastic SOT340-1 (SSOP24) package.

Six of the transistors are in three half-bridge configurations.

CAUTION The device is supplied in an antistatic package.

Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-state resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PHN708_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PHN708
Manufacturer NXP Semiconductors
File Size 92.76 KB
Description 7 N-channel 80 mohm FET array enhancement mode MOS transistors
Datasheet download datasheet PHN708 Datasheet
Additional preview pages of the PHN708 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PHN708 7 N-channel 80 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17 Philips Semiconductors Product specification 7 N-channel 80 mΩ FET array enhancement mode MOS transistors FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Driving high performance three phase brushless DC motors. DESCRIPTION Seven enhancement mode MOS transistors in a 24-pin plastic SOT340-1 (SSOP24) package. Six of the transistors are in three half-bridge configurations. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
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