Datasheet Details
| Part number | PHT1N60R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 30.35 KB |
| Description | PowerMOS transistor |
| Datasheet | PHT1N60R_PhilipsSemiconductors.pdf |
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Overview: Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R.
| Part number | PHT1N60R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 30.35 KB |
| Description | PowerMOS transistor |
| Datasheet | PHT1N60R_PhilipsSemiconductors.pdf |
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N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance.
Intended for use in pact Fluorescent Lights (CFL) and general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
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