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PHT2NQ10T - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

2.

Key Features

  • s TrenchMOS™ technology s Fast switching s Surface mount package. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHT2NQ10T N-channel TrenchMOS transistor M3D087 Rev. 01 — 16 October 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT2NQ10T in SOT223 2. Features s TrenchMOS™ technology s Fast switching s Surface mount package. 3. Applications s Primary side switch in DC to DC converters s High speed driver s Fast, general purpose switch. 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description gate (g) 4 Simplified outline Symbol d drain (d) source (s) drain (d) 1 Top view g s 2 3 MSB002 - 1 MBB076 SOT223 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.