NXP Semiconductors PHT6N06LT
The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications.| Part No. | PHT6N06LT |
|---|---|
| Datasheet | PHT6N06LT Download |
| Manufacturer |  NXP Semiconductors |
| Description | TrenchMOS transistor Logic level FET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. PHT6N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 5.5 2.5 8.3 150 150 UNIT V A A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab)DESCRIPTION
PIN CONFIGURATION 4 SYMBOL d g s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tsp = 25 ˚C Tamb = 25 ˚C Tsp = 100 ˚C Tamb = 100 ˚C Tsp = 25 ˚C Tamb = 25 ˚C Tsp = 25 ˚C Tamb = 25 ˚C MIN. - 55 MAX.
