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PHT6NQ10T - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Motor and relay drivers

d.c.

to d.c.

converters The PHT6NQ10T is supplied in the SOT223 surface mounting package.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL d QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHT6NQ10T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 6.5 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters The PHT6NQ10T is supplied in the SOT223 surface mounting package. PINNING PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION SOT223 4 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID ID IDM PD Tj, Tstg CONDITIONS MIN. - 65 MAX. 100 100 ± 20 6.5 3 4.1 1.