PHT6N06T Datasheet | NXP Semiconductors

Trench MOS™ standard level FET M3D087 Rev. 02 - 03 February 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology. Product availability: PHT6N06T in SOT223. 1.2 Features s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3 Applications s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ 2. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description Simplified outline gate (g) drain (d) 4 source (s) drain (d) Symbol d g MBB076 s Top view MSB002 - 1 SOT223 Philips Semiconductors Trench MOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the...