Download BUK6218-40C Datasheet PDF
BUK6218-40C page 2
Page 2
BUK6218-40C page 3
Page 3

BUK6218-40C Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

BUK6218-40C Key Features

  • AEC Q101 pliant
  • Suitable for standard and logic level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating