Download BUK7210-55B Datasheet PDF
BUK7210-55B page 2
Page 2
BUK7210-55B page 3
Page 3

BUK7210-55B Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

BUK7210-55B Key Features

  • 185 °C rated
  • Q101 pliant
  • Standard level patible
  • Very low on-state resistance