PMWD18UN Description
Dual mon drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
- Part: PMWD18UN
- Manufacturer: NXP Semiconductors (official site)
- Size: 118.90 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| PMWD15UN | Dual N-channel uTrenchMOS ultra low level FET |
| PMWD16UN | Dual N-channel uTrenchMOS ultra low level FET |
| PMWD19UN | Dual uTrenchMOS ultra low level FET |
| PMWD20XN | Dual N-channel uTrenchMOS extremely low level FET |
| PMWD22XN | Dual N-channel uTrenchMOS extremely low level FET |