100NDD Datasheet | Naina Semiconductor

Naina Semiconductor emiconductor Ltd. Diode - Diode Module Features - - - - - Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It Values 100 157 2000 18 Units A A A k A s M1 & M2 PACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 to +125 5 0.35 Units C/W Electrical Characteristics (TA = 25OC unless otherwise noted) Parameter Maximum average on-state current, 180 C sinusoidal Maximum repetitive peak reverse voltage range Forward voltage drop RMS isolation voltage Symbol IT(max) VRRM VFM VISO Values 100 0 200 to 1600 1.35 2500 Units A V V V D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 4205450 - Fax: 0120-4273653 0120 sales@nainasemi. - .nainasemi. Naina Semiconductor emiconductor Ltd. ALL DIMENSIONS ARE IN MM Diode Configuration D-95, Sector 63,...