N04Q16YYC2B Description
Suite 220, Milpitas, CA 95035 ph: N04Q16yyC2B Advance Information .. 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.
N04Q16YYC2B Key Features
- Multiple Power Supply Ranges 1.1V
- 1.3V 1.65V
- 1.95V 2.3V
- 2.7V 2.7V
- Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ 2.5V Vcc with 3V VccQ
- Very low standby current 50nA typical for 1.2V operation
- Very low operating current 400µA typical for 1.2V operation at 1µs
- Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs
- Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for
- Automatic power down to standby mode