Datasheet Summary
DDR3(L) 4Gb SDRAM
NT5CB(C)512M8CN / NT5CB(C)256M16CP
Nanya Technology Corp.
NT5CB(C)512M8CN / NT5CB(C)256M16CP mercial, Industrial and Automotive DDR3(L) 4Gb SDRAM
Features
- JEDEC DDR3 pliant
- 8n Prefetch Architecture
- Differential Clock(CK/) and Data Strobe(DQS/ )
- Double-data rate on DQs, DQS and DM
- Signal Integrity
- Configurable DS for system patibility
- Configurable On-Die Termination
- ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)
- Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
- Signal Synchronization
- Write Leveling via MR settings
- Read Leveling via MPR
- Power...