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a
Process 95
2N6483-85 N-Channel Monolithic Dual JFETs
General Description
The 2N6483 thru 2N6485 series of N-channel monolithic dual JFETs is designed for low to medium frequency low noise differential amplifier applications requiring tight match and high common-mode rejection.
Absolute Maximum Ratings (25°o
Gate-Drain or Gate-Source Voltage Gate Current
-50V
50 mA
Device Dissipation (Each Side), Ta = 85°C
(Derate 2.56 mW/°C)
250 mW
Total Device Dissipation, Ta = 85' (Derate 4.3 mW/°C)
500 mW
Storage Temperature Range
65° C to +200° C
Lead Temperature (1/16" from case
for 10 seconds)
300°C
~" 0.175-0.195 (4.445-4.9531
SEATING PLANE
0.209 0.230 ""(5.309 5.842)
0.170-0210 14^18-5^3^)
I
HID IB...
0.016-0.019 "
M6 0.483)
i'r
029 - 048 0711 1.
2N6483 Datasheet
