GENERAL DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(25°o Gate-Drain or Gate-Source Voltage Gate Current -50V 50 mA Device Dissipation (Each Side), Ta = 85°C (Derate 2.56 mW/°C) 250 mW Total Device Dissipation, Ta = 85' (Derate 4.3 mW/°C) 500 mW Storage Temperature Range 65° C to +200° C Lead Temperature (1/16" from case for 10 seconds) 300°C ~" 0.175-0.195 (4.445-4.9531 SEATING PLANE 0.209 0.230 ""(5.309 5.842) 0.170-0210 14^18-5^3^) I HID IB... 0.016-0.019 " \0M6 0.483) i'r 029 - 048 0711 1.2191 PIN FET (12) 1 S1 2 D1 3 G1 5 S2 6 D2 7 G2 ELECTRICAL CHARACTERISTICS
(25°c unless otherwise noted) IqSS BVQSS VGS(off) Vqs 1(3 IfjSS gf s gf s g os g os Cj ss Crss en PARAMETER Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Current Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage CONDITIONS Vgs" -30V, V DS -0 IG--1 WA.
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