NPT2018 Overview
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package. RF Specifications (CW, 2.5 GHz):.
NPT2018 Key Features
- Suitable for linear and saturated