NPT2018 - GaN HEMT

General Description

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.

This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package.

Key Features

Suitable for linear and saturated.

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NPT2018 gan hemt by Nitronex - Datasheet Preview

Datasheet Details

Part number	NPT2018
Manufacturer	Nitronex
File Size	897.71 KB
Description	GaN HEMT
Datasheet	NPT2018 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L/S-Band Radar DC-6 GHz 12.5W GaN HEMT Product Description The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package. RF Specifications (CW, 2.