The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.
This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package.
Full PDF Text Transcription for NPT2018 (Reference)
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NPT2018
Preliminary
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain Efficiency (>60%)
Applications
Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Applications VHF/UHF/L/S-Band Radar
DC-6 GHz 12.5W
GaN HEMT
Product Description
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package.
RF Specifications (CW, 2.
NPT2018 Datasheet
