Datasheet Details
| Part number | NPT2019 |
|---|---|
| Manufacturer | Nitronex |
| File Size | 889.29 KB |
| Description | GaN HEMT |
| Datasheet |
 NPT2019 Datasheet
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| Part number | NPT2019 |
|---|---|
| Manufacturer | Nitronex |
| File Size | 889.29 KB |
| Description | GaN HEMT |
| Datasheet |
NPT2019 Datasheet
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The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. , 2.5 GHz): VDS = 48V, IDQ = 150mA, TC= 25°C Symbol Parameter Min Typ Max Units GSS Small-signal Gain - 16.2 - dB PSAT Saturated Output Power - 44.8 - dBm SAT Efficiency at Saturated Output Power GP Gain at P
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