NPT2019 Overview
The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package. RF Specifications (Pulsed , 2.5 GHz):.
NPT2019 Key Features
- Suitable for linear and pulsed