2N6609 - COMPLEMENTARY POWER TRANSISTORS

onsemi

Key Features

http://onsemi. com.
Pb.
Free Packages are Available.
High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs 16 A.

2N6609 complementary power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	2N6609
Manufacturer	onsemi
File Size	99.52 KB
Description	COMPLEMENTARY POWER TRANSISTORS
Datasheet	2N6609 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features http://onsemi.com • • • • • Pb−Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.