Pb-Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs
Datasheets by Manufacturer
2N6609 — Inchange Semiconductor — Silicon PNP Power Transistor
2N6609 — Multicomp — Complementary Power Transistor
2N6603 — Motorola Semiconductor — HIGH FREQUENCY TRANSISTOR
2N6604 — Motorola Semiconductor — HIGH FREQUENCY TRANSISTOR
