2SA2016 Key Features
- Adoption of FBET and MBIT processes
- Large current capacity
- Low collector-to-emitter saturation voltage
- High-speed switching
- Ultrasmall package facilitales miniaturization in end products
- High allowable power dissipation
- Part: 2SA2016
- Description: Bipolar Transistor
- Manufacturer: onsemi
- Size: 232.23 KB
Other 2SA2016 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
SANYO |
2SA2016 | PNP/NPN Epitaxial Planar Silicon Transistors |
Unisonic Technologies |
2SA2016 | PNP TRANSISTOR |