2SA2016 - Bipolar Transistor

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ON Semiconductor

Part number	2SA2016
Manufacturer	ON Semiconductor
File Size	232.23 KB
Description	Bipolar Transistor
Datasheet	2SA2016 Datasheet
Additional preview pages of the 2SA2016 datasheet.

Adoption of FBET and MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitales miniaturization in end products.
High allowable power dissipation ( )2SA2016 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage VCBO VCES VCEO VEBO P.

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Published: Apr 1, 2016 |