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2SC536N - Bipolar Transistor

Key Features

  • Large current capacity and wide ASO Specifications ( ) : 2SA608N Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--50)60 (--)50 (--)6 (--)150 (--)400 500 150 --55 to +150 Unit V V V mA mA mW °C °C Stresses exceeding Maximum Ratings may dam.

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Datasheet Details

Part number 2SC536N
Manufacturer onsemi
File Size 207.73 KB
Description Bipolar Transistor
Datasheet download datasheet 2SC536N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6324B 2SA608N/2SC536N Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA http://onsemi.com Applicaitons • Capable of being used in the low frequency to high frequency range Features • Large current capacity and wide ASO Specifications ( ) : 2SA608N Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--50)60 (--)50 (--)6 (--)150 (--)400 500 150 --55 to +150 Unit V V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.