Large current capacity and wide ASO. 0.45
3.5
1.4max
0.6
1.27
4.0max 13.7 14.0
0.5
0.45
4.5
0.44
1 2.5
2 2.5
3
( ) : 2SA608N
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA
Rat.
Full PDF Text Transcription for 2SC536N (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC536N. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications · Capable of being ...
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eneral-Purpose Amplifier Applications Applications · Capable of being used in the low frequency to high frequency range. Package Dimensions unit:mm 2164 [2SA608N/2SC536N] 4.5 3.7 Features · Large current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.
2SC536N Datasheet
