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2SC536N - NPN TRANSISTOR

Datasheet Summary

Features

  • Large current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 3 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA Rat.

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Datasheet preview – 2SC536N

Datasheet Details

Part number 2SC536N
Manufacturer Sanyo Semicon Device
File Size 40.85 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC536N Datasheet
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Full PDF Text Transcription

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Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications · Capable of being used in the low frequency to high frequency range. Package Dimensions unit:mm 2164 [2SA608N/2SC536N] 4.5 3.7 Features · Large current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.
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