ATP101 - P-Channel Power MOSFET

Features

Low ON-resistance.
Slim package.
Halogen free compliance.
Large current.
4.5V drive.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV.

ON Semiconductor

Datasheet Details

Part number	ATP101
Manufacturer	ON Semiconductor
File Size	250.98 KB
Description	P-Channel Power MOSFET
Datasheet	ATP101 Datasheet
Additional preview pages of the ATP101 datasheet.

📁 Similar Datasheet

ATP102 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP103 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
ATP104 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP106 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
ATP107 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP108 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP154-1 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP-SM - Standard Crystals (CTS Corporation)
ATP0574-1 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP0644-3 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)

Other Datasheets by ON Semiconductor

ATP103 - P-Channel Power MOSFET
ATP104 - P-Channel Power MOSFET
ATP106 - P-Channel Power MOSFET
ATP107 - P-Channel Power MOSFET
ATP108 - P-Channel Power MOSFET
ATP112 - P-Channel Power MOSFET
ATP113 - P-Channel Power MOSFET
ATP114 - P-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text

Ordering number : ENA1646A ATP101 P-Channel Power MOSFET –30V, –25A, 30mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • Slim package • Halogen free compliance • Large current • 4.

Published: Aug 23, 2015 |