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FCHD040N65S3 - N-Channel MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 35.4 mW.
  • Ultra Low Gate Charge (Typ. Qg = 136 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 1154 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number FCHD040N65S3
Manufacturer ON Semiconductor
File Size 324.44 KB
Description N-Channel MOSFET
Datasheet download datasheet FCHD040N65S3 Datasheet
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FCHD040N65S3 MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive, 650 V, 65 A, 40 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 35.4 mW • Ultra Low Gate Charge (Typ. Qg = 136 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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