FDG6322C Overview
Key Specifications
Package: SC
Mount Type: Surface Mount
Pins: 6
Height: 1.1 mm
Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimizeon-state resistance.
Key Features
- N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V
- P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V
- Very small package outline SC70-6
- Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
- Gate-Source Zener for ESD ruggedness (>6kV Human Body Model)
