FDG6322C - Dual N & P Channel Digital FET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDG6322C
Manufacturer	ON Semiconductor
File Size	250.48 KB
Description	Dual N & P Channel Digital FET
Datasheet	FDG6322C Datasheet
Additional preview pages of the FDG6322C datasheet.

Product details

Description

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

Features

N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). SC70-6 SOT-23 SuperSOTTM-6 SOT-8 SO-8 SOIC-14 S2 G2 D1 pin 1 SC70-6 Mark: .22 D2 G1 S1 16 Q1 25 Q2 34 Absolute Maximum Ratings TA = 25.

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Published: Mar 23, 2020 |