FDMC86262P Datasheet | onsemi

MOSFET - P-Channel, POWERTRENCH) -150 V, -2 A, 307 mW General Description This P- Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on- state resistance and optimized for superior switching performance. Features - Max rDS(on) = 307 mW at VGS = - 10 V, ID = - 2 A - Max rDS(on) = 356 mW at VGS = - 6 V, ID = - 1.8 A - Very Low rDS(on) Mid Voltage P- Channel Silicon Technology Optimised for Low Qg - Optimised for Fast Switching Applications as Well as Load Switch Applications - 100% UIL Tested - This Device is Pb- Free, Halide Free and is ROHS pliant Applications - Active Clamp Switch - Load...