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FDMC86262P Datasheet P-Channel MOSFET

Manufacturer: onsemi

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General Description

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology.

This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.

Overview

MOSFET – P-Channel, POWERTRENCH) -150 V, -2 A, 307 mW FDMC86262P General.

Key Features

  • Max rDS(on) = 307 mW at VGS =.
  • 10 V, ID =.
  • 2 A.
  • Max rDS(on) = 356 mW at VGS =.
  • 6 V, ID =.
  • 1.8 A.
  • Very Low rDS(on) Mid Voltage P.
  • Channel Silicon Technology Optimised for Low Qg.
  • Optimised for Fast Switching.

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