FDMS2D4N03S
FDMS2D4N03S is N-Channel Power MOSFET manufactured by onsemi.
FDMS2D4N03S N-Channel Power Trench® MOSFET
.onsemi.
N-Channel Power Trench® Sync FETTM
30 V, 163 A, 1.8 mΩ
Features
General Description
- Max r DS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
- Max r DS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
- High Performance Technology for Extremely Low r DS(on)
- Sync FETTM Schottky Body Diode
- 100% UIL Tested
- Ro HS pliant
The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/ GPU Low Side Switch
- Networking Point of Load Low Side Switch
- Tele Secondary Side Rectification
D5
4G
D6
Pin 1
D7 D8
Top
Bottom
Power 56
3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS
EAS PD TJ,...
