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FDMS7620S - Dual N-Channel MOSFET

General Description

This device includes two specialized MOSFETs in a unique dual Power 56 package.

It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization.

The low switching loss “High Side” MOSFET is complementory by a low conduction loss “Low Side” SyncFET.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 10.1 A.
  • Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 7.5 A Q2: N-Channel.
  • Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12.4 A.
  • Max rDS(on) = 14.2 mΩ at VGS = 4.5 V, ID = 10.9 A.
  • Pinout optimized for simple PCB design.
  • Thermally efficient dual Power 56 Package.
  • RoHS Compliant General.

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Datasheet Details

Part number FDMS7620S
Manufacturer onsemi
File Size 432.95 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMS7620S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS7620S Dual N-Channel PowerTrench® MOSFET FDMS7620S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 13 A, 20.0 mΩ Q2: 30 V, 22 A, 11.2 mΩ Features Q1: N-Channel „ Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 10.1 A „ Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 7.5 A Q2: N-Channel „ Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12.4 A „ Max rDS(on) = 14.2 mΩ at VGS = 4.5 V, ID = 10.9 A „ Pinout optimized for simple PCB design „ Thermally efficient dual Power 56 Package „ RoHS Compliant General Description This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization. The low switching loss “High Side” MOSFET is complementory by a low conduction loss “Low Side” SyncFET.