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FGH75T65UPD - IGBT

General Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera

tor where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ. ) @ IC = 75 A.
  • 100% of Parts Tested ILM.
  • High Input Impedance.
  • Tightened Parameter Distribution.
  • Short Circuit Ruggedness > 5 ms @ 25°C.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

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IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 75 A • 100% of Parts Tested ILM • High Input Impedance • Tightened Parameter Distribution • Short Circuit Ruggedness > 5 ms @ 25°C • These Devices are Pb−Free and are RoHS Compliant Applications • Solar Inverter, UPS, Digital Power Generator www.onsemi.