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HUF76629D3ST-F085 N-Channel Logic Level UltraFET ® Power MOSFET
HUF76629D3ST-F085
N-Channel Logic Level UltraFET® Power MOSFET
100V, 20A, 52mΩ
Features
Typ rDS(on) = 41mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 39nC at VGS = 10V, ID = 20A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Distributed Power Architectures and VRM Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
HUF76629D3ST-F085 Datasheet
