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HUF76629D3ST-F085 - N-Channel Power MOSFET

Key Features

  • Typ rDS(on) = 41mΩ at VGS = 10V, ID = 20A.
  • Typ Qg(tot) = 39nC at VGS = 10V, ID = 20A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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HUF76629D3ST-F085 N-Channel Logic Level UltraFET ® Power MOSFET HUF76629D3ST-F085 N-Channel Logic Level UltraFET® Power MOSFET 100V, 20A, 52mΩ Features „ Typ rDS(on) = 41mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 39nC at VGS = 10V, ID = 20A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy Power Dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature RθJC