MAC15SN - Sensitive Gate Triacs

onsemi

Download the MAC15SN datasheet PDF. This datasheet also covers the MAC15SD variant, as both devices belong to the same sensitive gate triacs family and are provided as variant models within a single manufacturer datasheet.

Key Features

Sensitive Gate allows Triggering by Microcontrollers and other Logic Circuits.
High Immunity to dv/dt.
25 V/ms minimum at 110°C.
High Commutating di/dt.
8.0 A/ms minimum at 110°C.
Maximum Values of IGT, VGT and IH Specified for Ease of Design.
On-State Current Rating of 15 Amperes RMS at 70°C.
High Surge Current Capability.
120 Amperes.
Blocking Voltage to 800 Volts.
Rugged, Economical TO.

📥 Download Datasheet

MAC15SN sensitive gate triacs by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MAC15SD-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MAC15SN
Manufacturer	onsemi
File Size	140.83 KB
Description	Sensitive Gate Triacs
Datasheet	MAC15SN Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MAC15SN	Triac	Motorola
MAC15S	Silicon Bidirectional Thyristors	Motorola
MAC15SD	Triac	Motorola
MAC15SM	Triac	Motorola
MAC15	Silicon Triacs	GE Solid State

Other Datasheets by onsemi

Part Number	Description
MAC15SD	Sensitive Gate Triacs
MAC15SM	Sensitive Gate Triacs
MAC15	Triacs Silicon Bidirectional Thyristors
MAC15A10FP	Triacs
MAC15A6FP	Triacs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MAC15SD, MAC15SM, MAC15SN Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. Features • Sensitive Gate allows Triggering by Microcontrollers and other Logic Circuits • High Immunity to dv/dt − 25 V/ms minimum at 110°C • High Commutating di/dt − 8.