MCH3479 - Power MOSFET

Product Overview

ON Semiconductor

Part number	MCH3479
Manufacturer	ON Semiconductor
File Size	386.89 KB
Description	Power MOSFET
Datasheet	MCH3479 Datasheet
Additional preview pages of the MCH3479 datasheet.

Low On-Resistance.
1.8V Drive.
ESD Diode-Protected Gate.
Pb-Free, Halogen Free and RoHS Compliance VDSS 20V RDS(on) Max 64mΩ@ 4.5V 95mΩ@ 2.5V 149mΩ@ 1.8V ID Max 3.5A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Te.

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Published: Oct 22, 2015 |