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MCH3484
Power MOSFET 20V, 40mΩ, 4.5A, Single N-Channel
www.onsemi.com
Features
On-Resistance RDS(on)1=33m (typ) 0.9V Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode-Protected Gate
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Drain to Source Voltage Gate to Source Voltage Drain Current (DC)
VDSS VGSS ID
Drain Current (Pulse) PW10s, duty cycle1%
IDP
Power Dissipation
When mounted on ceramic substrate (900mm20.8mm)
PD
Junction Temperature
Tj
Operating Temperature
Topr
Storage Temperature
Tstg
Value 20 5 4.5
18
1.0
150 5 to +150 55 to +150
Unit V V A
A
W
C C C
Electrical Connection
N-Channel
3
1 1 : Gate 2 : Source
2 3 : Drain
Packing Type : TL Marking
FR
TL
LOT No. LOT No.