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MCH3486 - Power MOSFET

Features

  • Low RDS(on).
  • 4V Drive.
  • ESD Diode-Protected Gate.
  • Pb-Free, Halogen Free and RoHS Compliance.
  • Small Surface Mount Package (MCPH3) Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Junction Temperature PD Tj Storage Temperature Ts.

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Datasheet Details

Part number MCH3486
Manufacturer ON Semiconductor
File Size 351.45 KB
Description Power MOSFET
Datasheet download datasheet MCH3486 Datasheet
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Full PDF Text Transcription

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MCH3486 Power MOSFET 60V, 137mΩ, 2A, Single N-Channel www.onsemi.com Features • Low RDS(on) • 4V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance • Small Surface Mount Package (MCPH3) Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Junction Temperature PD Tj Storage Temperature Tstg Value 60 ±20 2 8 Unit V V A A 1 150 −55 to +150 W °C °C VDSS 60V RDS(on) Max 137 mΩ@10V 192 mΩ@4.5V 217 mΩ@4V ID Max 2A Electrical Connection N-Channel 3 1 1:Gate 2:Source 2 3:Drain Packing Type:TL Marking LOT No. LOT No.
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