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MJE253G - Complementary Silicon Power Plastic Transistors

Download the MJE253G datasheet PDF. This datasheet also covers the MJE243G variant, as both devices belong to the same complementary silicon power plastic transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Collector.
  • Emitter Sustaining Voltage.
  • High DC Current Gain.
  • Low Collector.
  • Emitter Saturation Voltage.
  • High Current Gain Bandwidth Product.
  • Annular Construction for Low Leakages.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJE243G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE253G
Manufacturer onsemi
File Size 230.89 KB
Description Complementary Silicon Power Plastic Transistors
Datasheet download datasheet MJE253G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Complementary Silicon Power Plastic Transistors MJE243G (NPN), MJE253G (PNP) These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features  High Collector−Emitter Sustaining Voltage  High DC Current Gain  Low Collector−Emitter Saturation Voltage  High Current Gain Bandwidth Product  Annular Construction for Low Leakages  These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCB VEB IC ICM IB PD 100 Vdc 100 Vdc 7.0 Vdc 4.0 Adc 8.0 Adc 1.