Datasheet Details
| Part number | MJE253 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.73 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJE253-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | MJE253 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.73 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJE253-InchangeSemiconductor.pdf |
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·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJE243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.5 W 15 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MA X 8.34 UNIT ℃/W 83.4 ℃/W MJE253 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE253 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -2A ;IB= -0.2A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE253 | POWER TRANSISTORS | ON |
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MJE253 | 4 AMPERE POWER TRANSISTORS | Motorola |
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MJE253 | (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS | Central Semiconductor |
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MJE253G | Complementary Silicon Power Plastic Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
| MJE200 | Silicon NPN Power Transistor |
| MJE240 | Silicon NPN Power Transistor |
| MJE243 | Silicon NPN Power Transistor |
| MJE13002 | Silicon NPN Power Transistors |
| MJE13003A | Silicon NPN Power Transistor |
| MJE13005 | Silicon NPN Power Transistors |
| MJE13005D | TO-220C Silicon NPN Power Transistor |
| MJE13005F | Silicon NPN Power Transistor |
| MJE13007A | Silicon NPN Power Transistor |
| MJE13009 | Silicon NPN Power Transistors |