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MJE253 - 4 AMPERE POWER TRANSISTORS

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc hFE = 40 – 200 hFE = 40 – 120 — MJE243, MJE253 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.
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