MJE253 - POWER TRANSISTORS

Key Features

http://onsemi. com.
High Collector.
Emitter Sustaining Voltage.
High DC Current Gain @ IC = 200 mAdc.
hFE = 40.
200 = 40.
120 Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product.
fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb.
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MJE253 power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJE253
Manufacturer	ON
File Size	116.08 KB
Description	POWER TRANSISTORS
Datasheet	MJE253 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features http://onsemi.com • High Collector−Emitter Sustaining Voltage − • High DC Current Gain @ IC = 200 mAdc • • • • hFE = 40−200 = 40−120 Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb−Free Packages are Available* VCEO(sus) = 100 Vdc (Min) 4.