MJE253 Description
MJE243 − NPN, MJE253 − PNP Preferred Device plementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications.
MJE253 Key Features
- High Collector-Emitter Sustaining Voltage
- High DC Current Gain @ IC = 200 mAdc
- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product
- fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb-Free Packag
- Continuous
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 11