| Part Number | MJE253 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . . |
MJE253 Datasheet and Specifications PDF
The MJE253 is a (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS.
| Part Number | MJE253 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to t. al Resistance,Junction to Ambient MA X 8.34 UNIT ℃/W 83.4 ℃/W MJE253 isc Website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE253 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Colle. |
| Part Number | MJE253 Datasheet |
|---|---|
| Description | 4 AMPERE POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switch. ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
| Part Number | MJE253 Datasheet |
|---|---|
| Description | POWER TRANSISTORS |
| Manufacturer | onsemi |
| Overview |
MJE243 − NPN, MJE253 − PNP
Preferred Device
Complementary Silicon Power Plastic Transistors
These devices are designed for low power audio amplifier and low−current, high−speed s.
* High Collector *Emitter Sustaining Voltage * * High DC Current Gain @ IC = 200 mAdc * * * * hFE = 40 *200 = 40 *120 Low Collector *Emitter Saturation Voltage * VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product * fT = 40 MHz (Min) @ IC = 100 mAdc Annular Co. |