MMBTA56WT1
MMBTA56WT1 is PNP Transistor manufactured by onsemi.
Features
- Moisture Sensitivity Level: 1
- ESD Rating: Human Body Model
- 4 k V
- Pb- Free Package is Available
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol VCEO VCBO VEBO IC Value
- 80
- 80
- 4.0
- 500 Unit Vdc Vdc Vdc m Adc http://onsemi.
COLLECTOR 3
Machine Model
- 400 V
1 BASE 2 EMITTER
3 1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Rq JA TJ, Tstg Max 150 833
- 55 to +150 Unit m W °C/W °C
SC- 70 (SOT- 323) CASE 419 STYLE 3
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAM
FM M G G 1
FM = Device Code M = Date Code- G = Pb- Free Package (Note: Microdot may be in either location)
- Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMBTA56WT1 MMBTA56WT1G Package SC- 70 SC- 70 (Pb- Free) Shipping† 3000/T ape & Reel 3000/T ape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor ponents Industries, LLC, 2006
January, 2006
- Rev. 1
Publication Order Number: MMBTA56WT1/D
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (Note 1) (IC =
- 1.0 m Adc, IB = 0) Emitter- Base Breakdown Voltage (IE =
- 100 m Adc, IC = 0) Collector Cutoff Current (VCE =
- 60 Vdc, IB = 0) Collector Cutoff Current (VCB...
