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NCP51810 - High Speed Half-Bridge Driver

General Description

Pin No.

side driver positive bias voltage output High side driver sourcing output High side driver sinking output S

Key Features

  • 150 V, Integrated High.
  • Side and Low.
  • Side Gate Drivers.
  • UVLO Protections for VDD High and Low.
  • Side Drivers.
  • Dual TTL Compatible Schmitt Trigger Inputs.
  • Split Output Allows Independent Turn.
  • ON/Turn.
  • OFF Adjustment.
  • Source Capability: 1 A; Sink Capability: 2 A.
  • Separated HO and LO Driver Output Stages.
  • 1 ns Rise and Fall Times Optimized for GaN Devices.
  • SW and PGND: Negative Voltage Trans.

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Datasheet Details

Part number NCP51810
Manufacturer onsemi
File Size 767.31 KB
Description High Speed Half-Bridge Driver
Datasheet download datasheet NCP51810 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Speed Half-Bridge Driver for GaN Power Switches NCP51810 The NCP51810 high−speed, gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode), high electron mobility transistor (HEMT), gallium nitrade (GaN) power switches in medium−voltage half−bridge DC−DC application. The NCP51810 offers short and matched propagation delays with advanced level shift technology providing −3.5 V to +150 V (typical) common mode voltage range for the high−side drive and −3.5 V to +3.5 V common mode voltage range for the low−side drive. In addition, the device provides stable dV/dt operation rated up to 200 V/ns for both driver output stages in high speed switching applications.