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NDD03N50Z
N-Channel Power MOSFET 500 V, 3.3 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 2.6 A ESD (HBM) (JESD22−A114)
Peak Diode Recovery
VDSS ID ID
IDM PD VGS EAS
Vesd dv/dt
500
V
2.6
A
1.7
A
10
A
58
W
±30
V
120
mJ
2000 4.5 (Note 1)
V V/ns
Continuous Source Current (Body Diode)
IS
2.
NDD03N50Z Datasheet
