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NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET 600 V, 3.6 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage Continuous Drain Current RqJC
VDSS
600
V
ID
3.1
2.6
A
(Note 1)
Continuous Drain Current RqJC TA = 100°C
ID
2.9
1.65 A
(Note 1)
Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 3.0 A
ESD (HBM) (JESD 22−A114)
RMS Isolation Voltage (t = 0.3 sec., R.H.
NDD03N60Z Datasheet
