NDDP010N25AZ - Power MOSFET

onsemi

Features

High Speed Switching.
Low Gate Charge.
ESD Diode-Protected Gate.
100% Avalanche Tested.
Pb-Free, Halogen Free and RoHS Compliance Electrical Connection 2,4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW10s, duty cycle1% VDSS VGSS ID IDP Power Dissipation Tc=25C PD Junction Temperature Tj Storage Temperature Tstg Source Current (Body Di.

Click to expand full text

NDDP010N25AZ Power MOSFET 250V, 10A, 420mΩ, N-Channel www.onsemi.

Published: Apr 29, 2017 |