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NID5001N - Self-protected FET

Features

  • Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain.
  • to.
  • Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate.
  • to.
  • Source Clamp. Features http://onsemi. com VDSS (Clamped) 42 V ID MAX (Limited) 33 A.
  • RDS.

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Datasheet preview – NID5001N

Datasheet Details

Part number NID5001N
Manufacturer ON Semiconductor
File Size 62.10 KB
Description Self-protected FET
Datasheet download datasheet NID5001N Datasheet
Additional preview pages of the NID5001N datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com NID5001N Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features http://onsemi.
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